A UHV-COMPATIBLE ROUND WAFER HEATER FOR SILICON MOLECULAR BEAM EPITAXYFINEGAN SN; SWARTZ RG; MCFEE JH et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 2; PP. 497-500; BIBL. 5 REF.Article

MOLECULAR BEAM EPITAXIAL GROWTH OF INP.MCFEE JH; MILLER BI; BACHMANN KJ et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 259-272; BIBL. 49 REF.Article

A QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXYMCFEE JH; SWARTZ RG; ARCHER VD et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 214-216; BIBL. 9 REF.Article

ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP/GA⁰,47)IN⁰,53)AS/INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBEMILLER BI; MCFEE JH; MARTIN RJ et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 44-47; BIBL. 19 REF.Article

AN UNCOMPENSATED SILICON BIPOLAR JUNCTION TRANSISTOR FABRICATED USING MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; GRABBE P et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 11; PP. 293-295; BIBL. 4 REF.Article

LINEAR AND NONLINEAR OPTICAL PROPERTIES OF SOME TERNARY SELENIDESBOYD GD; KASPER HM; MCFEE JH et al.1972; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1972; VOL. 8; NO 12; PP. 900-908; BIBL. 28 REF.Serial Issue

A TECHNIQUE FOR RAPIDLY ALTERNATING BORON AND ARSENIC DOPING IN ION-IMPLANTED SILICON MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; VOSHCHENKOV AW et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 239-241; BIBL. 4 REF.Article

CYANIDE COVERAGE ON SILVER IN CONJUNCTION WITH SURFACE ENHANCED RAMAN SCATTERING = RECOUVREMENT DE AG PAR DU CYANURE EN RELATION AVEC UNE AUGMENTATION DE LA DIFFUSION RAMAN DE SURFACEBERGMAN JG; HERITAGE JP; PINCZUK A et al.1979; CHEM. PHYS. LETTERS; NLD; DA. 1979; VOL. 68; NO 2-3; PP. 412-415; BIBL. 16 REF.Article

IN-SITU LOW ENERGY BF₂⁺ ION DOPING FOR SILICON MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; VOSCHENKOV AM et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 138-140; BIBL. 11 REF.Article